Silicon carbide used in the field of semiconductors
Silicon carbide one-dimensional nanomaterials are expected to become an important component of the third-generation wide-bandgap semiconductor materials due to their unique micro-morphology and crystal structure, which have more unique properties and wider application prospects.
The third generation of semiconductor materials, namely wide bandgap semiconductor materials, also known as high temperature semiconductor materials, mainly include silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond, and the like. These materials have a wide forbidden band width (forbidden band width greater than 2.2 ev), high thermal conductivity, high breakdown electric field, high radiation resistance, high electron saturation rate, etc., suitable for high temperature and high frequency. , anti-radiation and high-power devices. The third generation of semiconductor materials with its excellent characteristics, the future application prospects are very broad.Application in the field of semiconductors
Silicon carbide one-dimensional nanomaterials are expected to become an important component of the third-generation wide-bandgap semiconductor materials due to their unique micro-morphology and crystal structure, which have more unique properties and wider application prospects.
The third generation of semiconductor materials, namely wide bandgap semiconductor materials, also known as high temperature semiconductor materials, mainly include silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond, and the like. These materials have a wide forbidden band width (forbidden band width greater than 2.2 ev), high thermal conductivity, high breakdown electric field, high radiation resistance, high electron saturation rate, etc., suitable for high temperature and high frequency. , anti-radiation and high-power devices. The third generation of semiconductor materials with its excellent characteristics, the future application prospects are very broad.
